Tag: electronic in hangzhou

WOLFSPEED’S CGHV96100F2 IS A GALLIUM-NITRIDE (GAN) HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) ON SILICON-CARBIDE (SIC) SUBSTRATES. THIS GAN INTERNALLY MATCHED (IM) FET OFFERS EXCELLENT POWER ADDED EFFICIENCY IN COMPARISON TO OTHER TECHNOLOGIES. GAN HAS SUPERIOR PROPERTIES COMPARED TO SILICON OR GALLIUM ARSENIDE, INCLUDING HIGHER BREAKDOWN VOLTAGE, HIGHER SATURATED ELECTRON DRIFT VELOCITY AND HIGHER THERMAL CONDUCTIVITY. GAN HEMTS ALSO OFFER GREATER POWER DENSITY AND Read more...